EUROPEAN CONGRESS AND EXHIBITION ON ADVANCED MATERIALS AND PROCESSES - EUROMAT 2021

Inkjet printing provides a powerful approach to fabricating graphene devices, especially for large area, customised formats and co-deposition ability with low cost and good quality. Experimental and theoretical studies of inkjet‐printed graphene structures are presented. Detailed electrical and structural characterization is reported and explained by comparison with transport modeling that include inter‐flake quantum tunneling transport and percolation dynamics. The results reveal that the electrical properties are strongly influenced by the flakes packing fraction and by complex meandering electron trajectories, which traverse several printed layers. Controlling these trajectories is essential for printing high‐quality devices that exploit the properties of 2D materials. A fully inkjet-printed Graphene/hexagonal Boron Nitride transistor was fabricated and attained signature graphene transfer behaviour with different electron and hole mobilities, which is consistent with the theoretical modelling. A prototype of a photodetector has also been fabricated by inkjet printing graphene contacts to an InSe flake, which outperformed traditional metal contacts due to the band alignment. This is the first time that inkjet‐printed graphene has successfully replaced single layer graphene as a contact material for 2D metal chalcogenides.