Speaker
Description
The controllable, reproducible and scalable growth of graphene and related 2D materials remains the foremost challenge for both research and any technologies exploiting their unique properties. While chemical vapour deposition (CVD) has become the most widespread method for 2D material film growth, even basic process parameters remain not well understood due to the manifold, complex parameter space. Here we focus on the catalyst as the key parameter, exploring a novel method of rapid epitaxial metal film deposition that can demonstrate the deposition of single crystal Cu films in any chosen orientation. By focusing on the catalyst, key problems such as contamination, roughness and polycrystallinity can be inherently solved within a single synthesis step to yield epitaxial graphene on single crystal Cu(111)[1]. Because of the simple in-situ nature of this approach there is no subsequent atmospheric exposure before the 2D material growth, removing the need for additional pre-treatments usually used to clean the catalyst[2].
[1] Burton, O. J. et al. ACS Nano 2020, 14, 13593–13601.
[2] Burton, O. J et al. J. Phys. Chem. C 2019, 123, 16257–16267.
| Speaker Country | United Kingdom |
|---|