Speaker
Description
Among the different CVD techniques to deposit polymer thin films, initiated chemical vapor deposition (iCVD) presents a great potential. iCVD involves the injection in the vapor phase of at least two precursors (a monomer and an initiator) into a vacuum chamber. The activation of the initiator occurs selectively through an array of heated filaments, inducing the production of primary radicals allowing the polymerization at the wafer surface. However, even if a wide range of polymer thin films can be deposited by this technique, most of the demonstrations are still at a lab scale.
In this work, wafer-scale processes in CMOS clean room conditions have been developed on a 200 mm single wafer iCVD tool. It is shown that iCVD is fully compatible with Si microelectronic requirements, showing good uniformity on large scale (200 mm), good repeatability and no generation of particles. Moreover, for the industrialization of this technique, a better understanding of the parameters influencing the polymer deposition process, especially at the beginning of the growth, is necessary. This is critically important for micro-nanotechnologies, for which very thin films (sometimes only few nanometers thick) should be produced on large substrates. Our works show that the growth kinetics depends on the monomer type and the process parameters used and that the growth rate is not necessarily constant with the deposition time, especially in the case of linear polymers. Examples of the growth of thermoplastics (methacrylate-based) and of cross-linked polymers (organosilicates) will be detailed and the growth mechanisms will be discussed. Then, different applications which have been studied in the field of microelectronics and microsystems will be presented, including the development of dielectrics for integrated-circuit interconnections (low-k dielectrics, insulation of Through-Silicon Via) and the development of sensitive layers for the functionalization of integrated gas sensors.
| Speaker Country | FRANCE |
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