Speaker
Description
Exploring new 2D materials with semi-conductive nature has attracted researcher’s attention especially after the isolation of graphene, aiming to increase the performances in the fabrication of devices.
Transition Metal Dichalcogenides (TMDs) materials belong to a special class of semi-conductors materials with sizable bandgaps, which they found to be useful in the field of optoelectronics. Titanium disulfide(TiS2) is the lightest and cheapest member of the layered transition metal dichalcogenide family. TiS2 monolayer consisting of edge-sharing TiS6 octahedra with electrical properties ranging from semi-metallic to semiconductor makes TiS2 a good candidate as an electrode material for lithium batteries.
Tin disulfide (SnS2) is an emerging Layered Metal Dichalcogenides (LMD) having an indirect semiconducting nature. SnS2 has a cadmium iodide (CdI2)-type structure with outstanding properties useful for future electronic devices.
Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) are well known to be ideal techniques for depositing scalable, conformal, ultrathin inorganic, and organic layers. Most of the previous attempts to grow TiS2 and SnS2 by ALD have used H2S as the sulfide precursor, the use of which is very problematic because H2S is an inflammable and very toxic gas. Finding an alternative precursor sulfur source is a challenge.
For the purpose of obtaining our novel 2D thin films, the synthesis was divided into two stages. First, we grow an intermediate amorphous polymer film by MLD at low temperature on flat 100 nm thick thermal SiO2/silicon substrate, by alternating a metallic precursor (TDMAT, Tetrakis (dimethylamino) titanium) (Ti –thiolates), and (TDMASn, Tetrakis (dimethylamino)tin) (Sn –thiolates) (ALD) with an organic molecule containing sulfur (EDT, 1,2 -ethanedithiol) (MLD), the growth is monitored in situ by ellipsometry. Second, we anneal the thiolate under a controlled atmosphere for obtaining the desired crystalline materials
| Speaker Country | France |
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