Speaker
Description
Silicon nanostructures have outstanding and tunable optoelectronic properties. Three-dimensional control over their geometry is expected to lead to significant advances in a variety of fields. To date, this has been a challenging task.
Our group has become expert in synthesizing silicon nanowire arrays with controlled geometries via metal-assisted chemical etching (MACE). Our recent advances in this field will be discussed.[1] Additionally, we have developed a templated electrochemical technique for patterning macroscopic arrays of single-crystalline Si micro- and nanowires with feature dimensions down to 5 nm. The patterning technique, termed three-dimensional electrochemical axial lithography (3DEAL),[2] allows the design and parallel fabrication of hybrid silicon nanowire arrays decorated with complex metal nano-ring architectures in a flexible and modular approach. 3DEAL is based on simple chemical and electrochemical approaches that were developed previously[3] and can produce homogeneous macroscale metal-silicon wire arrays. We recently used 3DEAL to selectively deposit electrocatalytic and passivating layers within Si nanowire photocathodes for water-splitting.[4]
1. F. J. Wendisch, M. Rey, N. Vogel, and G. R. Bourret Chem. Mater. 2020, 32, 9425–9434
2. F. J. Wendisch, M. Saller, A. Eadie, A. Reyer, M. Musso, M. Rey, N. Vogel, O. Diwald, G. R. Bourret, Nano Lett. 2018, 18, 11, 7343-7349
3. T. Ozel, G. R. Bourret, C. A. Mirkin Nat. Nanotechnol. 2015, 10, 319–324
4. F. J. Wendisch, M. Abazari, V. Werner, H. Barb, M. Rey, E.S.A. Goerlitzer, N. Vogel, H. Mahdavi, G. R. Bourret ACS AMI 2020, 12, 52581–52587
| Speaker Country | Austria |
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