Speaker
Description
III-V semiconductor nanowires (NWs) obtained by the vapor-liquid-solid (VLS) mechanism exhibit a zinc-blende (ZB) or a wurtzite (WZ) structure [1] depending on the growth conditions, and more particularly on the amount of III and V element fluxes [2-4]. Controlling precisely the growth of the crystal phases of self-assisted GaAs NWs by molecular beam epitaxy (MBE) would be an important achievement for device applications [5]. Nevertheless, the optimized growth of WZ segments in nanowire geometry is still in its infancy, and major achievements have been reported only very recently [6-8]. Optimizing the growth of each crystal phase thus appears necessary to better understand the correlation between the nanostructures and the properties of the NWs.
In this work, we investigate the relaxation and deformation mechanisms occurring in the NW by using the high reciprocal space resolution of the synchrotron nano-diffraction. We combined this technique with aberration-corrected scanning transmission electron microscopy (STEM) and dark-field TEM characterization performed on the same isolated NW and using the same diffraction spots as for the nano-diffraction. The complementary structural information provided by synchrotron nano-diffraction and TEM analysis precisely highlight the individual contributions of the ZB and WZ variants, and of the stacking faults on the relaxation and deformation mechanisms observed in the NW.
References
1 F. Glas, et al, Physical Review Letters 99 (2007), 146101.
2 P. Krogstrup, et al, J. Phys. D : Appl. Phys., 46 (2013), 313001.
3 D. Jacobsson, et al, Nature, 531 (2016), 317.
4 W. Kim, et al, Nano Lett., 18 (2018), 49-57.
5 E. M. T. Fadaly, et al¸ Nature, 580, (2020), 205-209.
6 T. Dursap, et al, Nanoscale Adv., 2, (2020), 2127-2134.
7 T. Dursap, et al, Nanotechnology, 32, (2021), 155602.
8 M. M. Jansen, et al, ACS Appl. Nano Mater., 3, 11, (2020), 11037-11047.
| Speaker Country | France |
|---|