Speaker
Description
Charge carrier mobility and concentration are fundamental quantities related to the electrical properties of semiconductors, which severely affect their performance in electronic devices for fundamental studies as well as commercial applications. These two quantities can be affected by numerous physical and chemical sources; among these, doping is one of the most relevant, being at the same time essential for practical operations. Noticeably, having reached the nanoscale for technologically relevant materials as well as the development of novel and more complex device architectures have unveiled a novel and promising way of doping semiconductor nanostructures without having to rely on chemical modification, but rather using intense electric field to induce charge densities[1,2].
In this work, we fabricate dual-gated electric double layer field effect transistors based on InAs nanowires gated with an ionic liquid and perform electrical transport measurements to extract carrier concentration and mobility. By adjusting the ionic distribution in the ionic liquid employed as gate dielectric, we electrostatically induce doping in the nanostructures under analysis. We systematically explore the effects on the electrostatic doping in InAs nanowires on carrier mobility and concentration, finding out that in carrier concentration can be enhanced up to orders of magnitude in a reduced voltage window. Meanwhile, the effect of the ionic accumulation of the surface of nanowire turns out to be detrimental on the mobility of the semiconductor nanostructure, which is reduced irrespectively to the sign of the accumulated species[3].
References
[1] G. Gupta et al., IEEE Transactions on Electron Devices, vol. 64, no. 8, pp. 3044–3055, Aug. 2017.
[2] S. Cristoloveanu, et al., Solid-State Electronics, vol. 155, no. March, pp. 32–43, 2019.
[3] D. Prete al., Nanotechnology, 32, 145204, 2021.
| Speaker Country | Italy |
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