Speaker
Description
Defect-induced sub-bandgap single photon emission (SPE) from hexagonal boron nitride (h-BN) is hugely interesting for quantum technology applications, opening a promising route for the design of next-generation single-photon sources [1]. We present our latest data that improves the control and scalability of emitters hosted in large-area h-BN films; bringing closer the possibility of full-scale device integration. By employing multidimensional super-resolution fluorescence microscopy, to measure spatial, spectral, and temporal properties of the emitters [2, 3], and through focusing on individually grown, chemical vapour deposition monolayer samples [4] (over cm areas) we have been able to build optimised multilayer structures for emitter interfacing and stabilisation. Through individual, post-transfer treatment methods we ensure that quantum emitters are localised to only one layer in the stack. Providing the first example of SPE location control in the z-direction. Furthermore, we present strategies for lateral emitter localisation. Combining these processes has allowed us greater control of emitter location in all three dimensions, permitting us to make h-BN hosted emitters which are stable, catalogable, easy to locate, and their number determinable, stimulating a great leap forward in h-BNs usability for quantum applications.
[1] Vogl, T et al. ACS Photonics (2019) doi:10.1021/acsphotonics.9b00314
[2] Stern, H. L. et al. ACS Nano (2019) doi: 10.1021/acsnano.9b00274
[3] Comtet, J. et al. Nano Lett (2019) doi: 10.1021/acs.nanolett.9b00178
[4] Wang, R. et al. ACS Nano (2019) doi:10.1021/acsnano.8b08712
| Speaker Country | United Kingdom |
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