EUROPEAN CONGRESS AND EXHIBITION ON ADVANCED MATERIALS AND PROCESSES - EUROMAT 2021

Alloying anode materials are promising candidates for developing high energy density Li-ion batteries (LIBs) to meet future electric vehicles' demands. Amorphous silicon (a-Si) is an attractive material due to its advantage of delivering a higher specific capacity of up to 3579 mAh/g (compared to graphite at 372 mAh/g). Despite this benefit, low electrical conductivity and massive volume...

Nanowire (NW) arrays are promising candidates for next generation optoelectronic devices. They offer the unique possibility to form heterojunctions using materials with a large lattice mismatch, enabled by strain relaxation along the radial direction of the nanowire. In photovoltaics, this allows for tandem junction solar cells using material combinations which are not compatible in...

A great deal of interest has been directed towards the design of new devices using 1D semiconductor nanostructures such as nanowires and nanorods (NRs). While the growth from the vapor phase has been thoroughly investigated, the growth from solutions has received much less attention, and its technology mostly relies on empirical results. We take a critical look at the research progress in the...

III-As (III-Al, Ga, In) nanowires (NWs) are considered promising nanostructures for electronics and power generation. Because of their nanoscale diameter, NWs sustain elastic strains up to 10%. This allows to control electronic properties of the NWs by elastic strains. For III-As NWs a 2% mechanical deformation changes photoluminescence position by 290 meV[1] or changes NW conductivity by four...

Silicon's physical properties, easy manufacturing, and cheapness promoted its industrial employment as a leading material for different applications. Si indirect bandgap is a great limit for photonics. The scientific community has devoted efforts to realizing a new class of efficient light emitters based on Si platforms. By a low-cost and industrially compatible method, we realized an...

Gallium oxide (Ga2O3) is a wide bandgap semiconducting material with application in the fields of high power, high temperature and gas sensing electronic devices. In this work we report the selective and fast detection of relative humidity at room temperature by chemoresistive gas sensors based on individual β-Ga2O3 nanowires (NWs), with negligible response to other gases. The synthesis has...

Using a patterned SiO2 mask we report on selective area growth of III-V materials on high-index GaAs substrates using molecular beam epitaxy (MBE). This platform is used to define 1D semiconductor nanowire (NW) networks with excellent surface selectivity for quantum transport studies. Due to the dependence of NW faceting on the substrate orientation and the trench direction within the oxide...

Vertical III-V semiconductor nanowires (NWs) have received a great interest towards realizing optoelectronic devices such as photodetectors[1] and LEDs[2]. These devices must be fabricated on CMOS-compatible substrates for large scale integration. Graphene on SiO2/Si is a good candidate to integrate the NWs as it ensures good back-contacting for electrical injection. Growth of vertical NWs on...