Speaker
Description
Si epitaxy is an important process in semiconductor technology because it enables the growth of thin crystalline layers with superior precision if the interaction of process conditions and layer growth is well understood and carefully controlled.
We present simulation models of reactor scale computational fluid dynamics (CFD), coupled with surface chemistry models for the growth of Si and Si:P (phosphorus-doped) epitaxy in a single wafer reactor. For this purpose, we adapted and extended chemistry models, which are known from literature [Hierlemann1995, Tomasini2010] to reproduce experiments at GLOBALFOUNDRIES. By iterating the coupled models through a high number of simulation runs and comparison to deposition patterns, we could identify a qualified set of model parameters.
While the Si model follows a standard kinetic approach [Hierlemann1995] with seven reaction equations, each described by two kinetic parameters, similar models for Si:P are extremely complex [Hierlemann1996] and very difficult to fit to experimental data. Thus, for the Si:P process, we developed an empirical model, adapted from work by Tomasini et al. [Tomasini2010]. Despite its simplicity, containing only four empirical parameters, it captures the main features of the process quite well.
We critically discuss how both models help to better understand and optimize the complex epitaxial deposition processes of Si and Si:P for raised source drain areas in MOSFET devices within a single wafer reactor at GLOBALFOUNDRIES. While these processes are characterized by a very complex interplay of gas flow, heat flow and chemistry, we can demonstrate that simulations coupling CFD and chemistry models allow unique insights and enable a rational process optimization.
References:
[Tomasini2010] P. Tomasini et al., Thin Solid Films 518, S12-S17 (2010) https://doi.org/10.1016/j.tsf.2009.10.046
[Hierlemann1995] M. Hierlemann et al., J. Electrochem. Soc. 142, 259-266 (1995) https://doi.org/10.1149/1.2043894
[Hierlemann1996] M. Hierlemann et al., Electrochem. Soc. Proc. 96, 35-40 (1996)
| Speaker Country | Germany |
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